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Abstract
This dissertation aims at studying and evaluating PSP compact model which is the new standard MOSFET model selected by the compact modeling council (CMC).
We have proposed a DC parameters extraction flow for the PSP model which was then applied on a set of measured devices from a 0.13um technology which covers a range of devices geometry from long to short devices and wide to narrow devices.
The dissertation also includes a comparison between the fitting error accomplished using PSP model and that done using BSIM4 model on the same set of data.
In general, an accepted error percentage was achieved with results comparable to BSIM4 and even outperforms it in some regions especially transition region between linear and saturation and also in output conductance (GDS) fitting.