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Abstract The Spin-based electronic devices have many advantages including longer coherent lifetime and faster data processing speed. Thus the generation, manipulation and detection of spin currents has the subject of intense research recently. The present thesis is devoted to investigate the spin-transport characteristics of two different mesoscopic spintronic devices which are: spin-interference mesoscopic device and mesoscopic superconductor-ferromagnetic hybrid device. For the first device, the spin-dependent conductance of such device is investigated. This device is in the form of ring, in which a quantum dot is embedded in one arm. This quantum dot is connected to one lead via tunnel barrier. Both Aharonov-Casher and Aharonov-Bohm effects are studied. That is, the spin polarized conductance is mainly induced by a combined effect of Rashba spin-orbit interaction and a magnetic flux. Also, quantum size effect for this device is investigated. The present results confirm the interplay of spin-orbit coupling and quantum interference effects in such confined quantum systems. This investigation is valuable for spintronics application, for example, quantum information processing Now, concerning the second device, the spin polarization and the corresponding tunneling magnetoresistance (TMR) for such junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization of the angle of precession is due to the spin flip through tunneling process. The present results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction. Keywords: Aharonov-Casher effect- Aharonov-Bohm effect - Quantum Dot - Ferromagnetic-superconductor double junctions. |