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العنوان
Measurement of low frequency noise in simox devices /
الناشر
Nasser Mohamed Anis Ebrahim ,
المؤلف
Ebrahim , Nasser Mohamed Anis
هيئة الاعداد
باحث / ناصر محمد أنيس ابراهيم
مشرف / محمد كامل حسن السعيد
مشرف / محمد طارق حسن عليوة
مناقش / السيد عبد الهادى طلخان
مناقش / عبد الحليم عبد النبى ذكرى
الموضوع
Noise -measurement. Electron-noise and interference
تاريخ النشر
1996 .
عدد الصفحات
xvi,119p.:
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
الهندسة الكهربائية والالكترونية
تاريخ الإجازة
1/1/1996
مكان الإجازة
جامعة عين شمس - كلية الهندسة - كهربة اتصالات
الفهرس
Only 14 pages are availabe for public view

from 184

from 184

Abstract

The research work described in this thesis is devoted to measure noise
in SIMOX MOSFET’s (low frequency) . The thesis contains three chapters. The first chapter contains a brief
about the different kinds of noise. It demonstrates the effect of noise in low
frequency of MOS and SIMOX transistors. The second chapter gives a review about the SOl technologies. The
advantages and draw backs of various SOl materials are outlined. The front
runner amongst them is seem to be SIMOX , and it gives a brief review on
SIMOX where transistors different contribution of the principle and
parasitic transistors were described. The third chapter discusses practical part which is composed of the
following items: A set up was built to measure I - V characteristic curves by using
automatic measurements to measure and to detect the threshold voltage on
MOS and SIMOX transistors.A set up to measure the high frequency noise in resistors manually
and then to develop the set up to perform the mesurements automatically.A set up to measure the low frequency noise in MOS and SIMOX
transistors manually and automatically. Finally , a discussion and an analysis of the measured results was
introduced.