الفهرس 
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Abstract
In this thesis a Monte Carlo program is developed to treat tbe problem of sputtering. A systematic study to the parameters that affect the process of sputtering is carried out. Among tbese parameters are the type of the incident ion, its initial energy, its direction and the type of the target. The obtained detailed distributions of the sputtered atoms such as the energy spectra and the angular and lateral distributions are important because these distributions are considered a data-source for further calculations concerning fusion to account for the contamination of the plasma and the errosion of the surrounding walls. A~so, two important problems are solved by a further extension of the developed Monte Carlo program. These are the calculation of the depth dependence of the energy deposited in the medium and the calculation of the range of the ion beams in a medium. These two functions are important for the process of semiconductor dopping and ion implantation.
In the calculations, three materials iron, nickel and copper are chosen as target materials. Atoms of the same kind as the target material and helium ions are chosen as projectiles.