![]() | Only 14 pages are availabe for public view |
Abstract Tungsten oxide films have been deposited at room temperature from metallic tungsten target onto ITO coated glass substrates with sheet resistance of 15 OlD using reactive rf magnetron sputtering. The films were formed in an Ar+( 2 -25) % 02 gas mixture with total pressure of 10m T Off and sputtering power 300 W. The films were subjected to electrochemical Li+ insertion using in-situ litlHum triflate (tritluoromethanesulfonate) anhydrous solution. The electrochromic properties of the rf reactively sputtered tungsten oxide films have been investigated in relation to the oxygen concentration in the sputtering atmosphere. Transmittance measurements have been performed in situ during the electrochemical formation of the tungsten bronzes using Broker IFS-66 Fourier transform spectrophotometer with integrating sphere. The structure of the films was investigated by XRD and is confirmed to be amorphous. The films deposited in Ar+ 15 % 02 gave maXImum value of both injected and extracted charge densities corresponding to maximum colouration and bleaching respectively. from the obtained results the best values of the electrochromic properties were achieved with electrochromic parameters as, ~Tsol =0.547,(OD)s=0.865 TJs=21.05 C/cm2, Q.~.= 41 mC/cm2 and Qlef.= 10.3 mC/cm2 respectively. The films deposited with oxygen concentration less than 5 % were found in metallic state. |