Search In this Thesis
   Search In this Thesis  
العنوان
Study On The Structural And Electrical Properties Of Bismuth Thin Films /
المؤلف
El-Sayed, Nour Zaky.
هيئة الاعداد
باحث / نور زكى السيد سليمان
الموضوع
Physics Electrical
تاريخ النشر
1987 .
عدد الصفحات
81 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
التصنيف العلمي للمقتنيات
تاريخ الإجازة
1/1/1987
مكان الإجازة
جامعة المنيا - كلية العلوم - قسم الفيزياء
الفهرس
Only 14 pages are availabe for public view

from 135

from 135

Abstract

structural studies was achieved by X-ray diffraction profile analysis and transmision electron microscope.
correction of X-ray diffraction patterns by Fourier line­ shape analysis according to Stokes method. For grain size and microstrain calculations Warren and Averbach
All bismuth films possess high crystallographic prefered orientation, ~here{ OOOl} planes are parallel to the film surface. The pronounced [OOOl]fiber texture even appears in the thinner film indicating that this
orientation starting from the nucleation stage. The X-ray diffraction, for fixed deposition rate, showed that as the film thickness increased the residual microstrain
parameter variation. The macrostrain and the increase of lattice parameter were explained in terms of the small crystallite size. The grain size, as measured by X-ray (effective grain size ) determined by X-ray diffraction was found to be less than that obtained by direct obser­ vation by electron microscopy. Therefore, it can be ossumQd that the coherent diffracting regions are not defined by the observed boundaries. This was attributed to the presence of substructure such as twinnine and/or stacking faults within the individual grains. Thus it can be assumed that, each grain shown by electron microscope is built up ~f a large number of tiny crystallites slight­ ly misoriented, i.e., mosiac texture .
from the thermal study, it was found that agglomera­ tion (void or isolated crystallite formation) during heat treatment (annealing) should be taken into consideration in addition to the usual lattice defects annihilation mechanism. The interaction between these two effect gives the net change in resistivity due to annealing.