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Abstract This work is concerned with studying the effect of temperature on phase transformation of thin a’t”lorphous films of Selenium. Samples of pure Se (99.99% purity) were prepared under vaCUl~ (10-6 cmHg) and annealed in the temperature r ang e 70-110°0. The transformation was exc.mined by measuring tile de c onduc t Lv Lty continuously during the p r oce s s , 1’he resulted spherulite on the surfaee were observed by ITlotalurgical microscope. Kinetic studies ware presented on basis of Avrami theory in conjunction with two distinct conductivity-content characterizations. The first is an empirical formula expresed interms of Log b, the seeond is an modif ied 01’ kirkpo.trick formula based on 0 • The microscopic examinations showed that the crystallization gODS through two distinct processes, formation of isolated rrystalline muclei and growth these amorphous phase. These sphorulites after reading certain stage weld to each other i~rnling a more ordered monisolated crystalline net work. Quantitative study of the process showed that the mean radius of spherulites R(t) increases gradually by increasing |