الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
Silicon carbide (SiC) is the most promising semiconductor material for high¬temperature, and high power devices. The metal contact has a greet effect on the barrier height of the device. The device barrier height characterizes the device behaviour with the forward characteristics and the reverse breakdown voltage. The contribution of the thesis is divided into two main parts. First to study the performance of the three most important silicon carbide (SiC) polytypes namely 4H, 6H, and 3C-SiC. The models study the performance and the characteristics of the electron mobility on doping concentration, temperature, and electric field. Second the present state of SiC power Schottky barrier diode (SBR) is presented. 4H-SiC SBD is modeled using a self-consistent model. The model is based on the solution of the semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface Si02/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. There is a very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to the effect of the oxide thickness, effective oxide charge, and interface state charge density. The model is used to characterize the barrier height change due to effect of oxide thickness, effective oxide charge, and interface state charge density.