الفهرس 
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Abstract
Amorphous GelsSess-xInx bulk ingot materials with x = 5, 7.5, 10, 12.5 and 15 have been prepared according to the well established melt-quenched technique. Stoichiometric proportions of the constituents high purity elements (99.999 %) are weighed according to their atomic percentage and sealed in vacuum sealed-silica tubes. The structural characterization of the prepared ingot materials was performed using X-ray diffraction (XRD), differential scanning colorimetery (DT A) and energy dispersive X-ray spectrometry (EDX) techniques.
Nearly stoichiometric GeInSe films corresponding to the x values were prepared by conventional thermal evaporation technique under vacuum pressure of 10-3 Pa. The XRD, transmission electron microscopy (TEM), electron diffraction (ED), and EDX techniques were employing to characterize the deposited films.
The optical properties of the deposited GelsSess-xInx films were calculated in the wavelength range 500-2500 nm. The DC electrical conductivity was also investigated in the temperature range 300-525 K.
Study of the thermal stability of the prepared GelsSess-xInx powdery samples indicates that the glass thermal stability, S as well as the forming ability Hr (Hruby parameter) increases with the increase of ”In” content, whereas, the two-thirds rule holds fairy well in the GelsSess-xInx system.
The X-ray and electron diffraction investigation of the deposited GelSSeSS-x!nx revealed that an amorphous-to-crystalline phase transition has been observed when the films being annealed at 523 K.
The optical properties of the deposited GelsSess-xInx thin films were calculated in the wavelength range 550-2500 nm. The refractive index of the deposited films was found to follow the two-term Cauchy dispersion relation. The dispersion of the refractive index data could be described according to the Wemple-DiDmoneico model, from which the oscillator parameters as well as other optical parameters were calculated. Graphical representation of the surface and volume energy losses function was also presented. The absorption coefficient of GelsSe8s-xInx thin films with different values of x was analyzed and the optical band gap was calculated.
The temperature dependence of the DC electrical resistivity in the temperature range 300-525 K for GelsSe8s-x1nx films with x = 5, 7.5, 10, 12.5 and 15 has been investigated. Analysis of conductivity curves revealed that, two conduction mechanisms were observed in the temperature range 300-525 K. The activation energy for the two conduction mechanisms was calculated.