الفهرس 
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Abstract
Recently, defect chalcopyrite semiconducting compounds have found potential applications in photovoltaic and optoelectronic devices. CdIn2Se4 corresponds to the group II-III2-VI4 defect chalcopyrite compounds. The present work aims to investigate the structural characteristics, optical properties and electrical resistivity of thin vacuum deposited films of CdIn2Se4. Thin films are to be deposited on glass and quartz substrates by conventional thermal evaporation technique. The CdIn2Se4 ingot material is to be prepared by direct fusion of stoichiometric proportions of the constituent elements. Structural characterization is to be undertaken by X-ray diffraction, electron diffraction, transmission electron microscopy and scanning electron microscopy techniques, while the chemical composition of the films are to be determined by energy-dispersive X-ray spectrometry. The optical constants could be determined from measured transmittance and reflectance at normal light incidence in the range 500–2000 nm. The dispersion and absorption could be analyzed and related to suitable models. The temperature dependence of the electrical resistivity is to be studied also in the range 300 K–550 K.