الفهرس 
IntroductionOnly 14 pages are availabe for public view
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Abstract
Recently, the demand for simultaneous global roaming in all wireless phones spurred the interest in developing multi-standard transceivers. The most important features of these transceivers are low power consumption, low cost, high speed and highly reliable designs. So most researchers moved to make use of submicron technologies to obtain over GHz receivers in standard MOS technologies which help achieving a single chip design solution for front end of the receiver. As a result, fully integrated RF transceivers have become a hot research topic.
Low Noise Amplifier (LNA) is an important block in RF wireless communication receivers, mostly to minimize the noise of the whole system. The main goal in the design of LNA is to achieve sufficient gain and low noise so as to suppress the noise from the following stages. Other characteristics have to be taken into consideration like high linearity, low operating voltage, high input and output matching and high reverse isolation because they also affect its performance to high extent. So it is a trade off problem.
This thesis starts with a review of fundamentals of LNA and then describes different topologies and their features. Moreover, we discuss different previous techniques of LNA and provide a comparison between them. These techniques come to solve some problems or improve some characteristics such as using forward body biasing to achieve low operating voltage.
Moreover, two Proposed LNA based on TMSC O.13llm CMOS technology are presented. These proposed circuits’ performances has been simulated by ADS2008, a well known simulation program, and compared to previous published results.