الفهرس 
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Abstract
A new ellipsometric method for full characterization of film-substrate systems; determining the dielectric constant of film and substrate and the film thikness, is presented. One components is used in the incident laser beam; a polarizer. We detect the angles of inciddence at which the intensity of the reflected beam is dc. Accordingly, by detecting two angles of incidence we can calculate the film thilness. By the use of a third detected angle of incidence we obtain the film parameters (film thikness and dielectric constant). Also, by detecting four angles of incidence we can constant of the substrate. Afilm- substrante systems lies in bands where the method can be applied according to their film thikness. This band structure is discussed in details. An error analysis is carried out to study the accuracy to the method. The presented procedure is applied to the particular and important case of film thilness measurement alone, when the optical properties are known and the validity and high accuracy of presented technique is proven experimentally through its application to an oxide-film on Si Wafers.