الفهرس 
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Abstract
The electron wave nature in the nano scaled double-gate (DG) MOSFETs is considered in calculating the gate leakage current based upon a full twodimensional (2D) non-equilibrium Greens function (NEGF) analysis with open boundary conditions (BC) at each electrode. A model was discussed and implemented into FETMOSS device simulator and results were presented showing the behaviour of gate leakage current versus supply, dimensions,and material parameters.
5.2 Future work
More investigation is required to include the gate tunneling current calculations for 3D structures such as gate around MOSFETs where the gate
leakage current eect is more critical due to the large gate oxide-channel contact area.
The study and implementation of computationally e cient methodsavailable in the literature, such as the Contact Block Reduction (CBR)method may be another possible area for research to speed up the gate current calculations.
Accounting for the technological and compatibility issues and restrictions when studying the impact of using high-k material on the gate current is definitely an important issue.
Studying and improving gate tunneling current compact models. That can be implemented and compared versus device simulation results.