الفهرس 
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Abstract
In this work, we present the experimental results of the deposited thin films of semiconductor materials (ZnS and PbS) on three different substrates: sapphire, fused silica and quartz using 308 nm Excimer laser pulses of 2.5 J/cm2 at a repetition rate of 100Hz. The crystalline targets ZnS or PbS was kept at 5 cm apart of the substrate in a clean chamber evacuated by diffusion pump to a base pressure of 5x10-5 Torr. The deposited film thickness was measured by Fizuea technique. characterization of the thin films’ surface morphology, crystal structure, optical and electrical properties is investigated. Elemental analysis of the deposited films compared to the bulk target was obtained via laser induced fluorescence of the produced plasma particles and the energy dispersive X-ray “EDX” technique. The effect of material’s quantum confinement on modifying their properties is then presented. Finally, we could use the prepared confined PbS thin films in two different important applications those were; IR photo detector and Hall Effect sensor.