الفهرس 
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Abstract
The samples under investigation of the general formula Cu1+xMxFe2-2xO4, M = Ti, Ge, and Li, 0.0 x 0.8 were prepared using the standard ceramic technique. Pure analar oxides (BDH) were mixed in stoichiometric ratios. Presintering was carried out at 800 C for 10hours and final sintering at 1050 C for 5 hours using the same rate of heating and cooling of 4 C/min. Thin films of different contents and dopants by pulsed laser deposition technique were also carried out. FTIR and X – ray diffraction were carried out to assure the formation of the samples in the proper form. The dielectric properties for the prepared samples in the polycrystalline form were measured at different temperatures as a function of the applied frequency. Also, the effect of the uniaxial pressure was investigated on some samples. The obtained results showed a decrease in the resistivity with increasing the applied pressure. The photoconductivity for the thin film samples was measured on some of them as example just to compare between the physical properties of polycrystalline and thin film to choose the most suitable sample to be more applicable.