الفهرس 
Device SimulationOnly 14 pages are availabe for public view
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Abstract
In the present work, a new highly user-oriented device simulator was developed for the study of
transport properties of planar MOSFETs by the solution of basic semiconductor equations in two
dimensions. This device simulator works under MATLAB environment. Perfect physical models for
Drift-Diffusion equations including band-structure parameters, carrier mobility, and
Generation-Recombination rates were implemented into the simulator.
The developed simulator works at different levels of sophistication (modes). The simplest mode
solves in one dimension, another one solves in two dimensions, third mode takes into account
generation mechanism, and the most sophisticated mode takes into account carrier heating. New
model for Gate Induced Drain Leakage (GIDL) phenomenon, ·observed in thin oxide MOSFETs, was
proposed and implemented into the simulator. Through the interactive easy to-use MATLAB graphical
user interface system, the user of the simulator can view the distribution of many local parameters
such as, doping concentration, electrfc potential, electric field, carrier mobility, and carrier
concentrations. Output drain current characteristics against both drain voltage and gate voltage
are available, as well. Sample outputs arc given ·accompanied with complete parametric study of
GIDL current.