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العنوان
Layout Dependent Effects on Nanometer IC Designs\
المؤلف
Eissa,Haitham Mohamad Abd El Hamid
هيئة الاعداد
باحث / هيثم محمد عبد الحميد عيسى
مشرف / هاني فكري محمد رجائي
مشرف / محمد امين دسوقي
مناقش / مهاب حسين أنيس
مناقش / خالد محمد وجيه شرف
تاريخ النشر
2016.
عدد الصفحات
192p.:
اللغة
الإنجليزية
الدرجة
الدكتوراه
التخصص
الهندسة الكهربائية والالكترونية
تاريخ الإجازة
1/1/2016
مكان الإجازة
جامعة عين شمس - كلية الهندسة - كهربة اتصالات
الفهرس
Only 14 pages are availabe for public view

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Abstract

As VLSI technology pushes into using advanced nodes down to 7nm and be- low, designers and foundries have exposed to a significant set of yield prob- lems. To combat yield failures, the semiconductor industry has deployed new tools and methodologies commonly referred to as design for manufac- turing (DFM). Most of the early DFM efforts concentrated on catastrophic failures, or physical DFM problems. However a new area of yield failures are now related to reliability and performance of the manufactured circuits, and having increased emphasis on what is now called “Parametric Yield” issues, and sometimes referred to as electrical-DFM (eDFM).
This thesis presents the parametric yield problems due to physical layout parameters effects on the final circuit performance, with more focus on their effects on Analog and Mixed signal (AMS) integrated circuits (ICs). These layout effects are generally known as Layout Dependent Effects or (LDEs). These parameters have to be considered in the design cycle and to be back annotated into the schematics or layout for accurate simulations. Thesis presents a complete eDFM solution that detects, analyzes, and fixes electrical hotspots (e-hotspots) within an analog circuit design, those caused by different process variations. Novel algorithms are proposed to implement the engines used to develop this solution. The flow is granted a US patented as of 2014.
The solution is examined on different designs, and at different technology nodes, including a 130-nm parametrically-failing level shifter circuit used in USB IP, which is verified with silicon wafer measurements that confirm the existence of parametric yield issues in the design. Additional experiments are applied on a 65-nm industrial operational amplifier and voltage control oscillator (VCO), as well as 45nm digital standard cell design. E-hotspot devices with high variations in dc current are identified. After fixing the e- hotspots, the variations in these designs are dramatically reduced to within designer’s acceptance criteria, while saving the original circuit specifications.