![]() | Only 14 pages are availabe for public view |
Abstract The present thesis is devoted to study some physical characteristics of ZnIn2Se Chapter I: Theoretical Background and Literature Review. Chapter II: Experimental Techniques. Chapter III. Structure identification of ZnIn2Se4 including: a)X-ray diffraction patterns (XRD). b)Energy dispersive X-ray spectroscopy (EDX). c)Atomic force microscope (AFM) d)Scan electron microscope (SEM) Chapter IV. The optical properties of ZnIn2Se4 films including: a)Determination of the optical constants b)The value of optical energy gap and the type of transition. c)The optical dielectric constant at high frequency . d)Determination of optical dispersion parameters. Chapter V. The electrical properties of ZnIn2Se4 including: a)Ac conductivity for pellet and thin film forms. b)Dark electrical (DC) resistivity for thin film form. c)Dielectric properties for pellet and thin film forms. d)I-V properties for thin film form. e)Thermoelectric power for thin film form. ChapterVI. Study of some characterization of [Au\ ZnIn2Se4\Si\Al]. a)I-V properties of heterojunction. b)C-V properties of heterojunction. c)Photovoltic charactrization. Keywords: 1.Defect chalcopyrite 2.ZnIn2Se4 3.Photovoltaic 4.Optical properties 5.Electrical properties 6.ZnIn2Se4 heterojunction. |