الفهرس | Only 14 pages are availabe for public view |
Abstract the increasing applications and complexity of electronic ststem has simulated the development of thin film microeleotronies. this approach ti the miniaturization ofoircuits involves the deposition of many resistors, capacitors, transistor, and their connections on stable insulating substrates the use of thin film technology for construction of electronic oircuits offers improved performance and reliability. film thicknesses are of prime importance for component functioning. this requires accurate methods for their fabrication and measurements. the measurement techniques used are classified as : optical, electrical, magetic, mechanical or radiational. the optical methods are direct and depend on the optical properties of the film and the substrate. since thin film thicknesses are generally of the order of awavelength of visible light, various types of optical interference phenomena have been found to be most useful. in addition to interference phenomena, there are other optical techniqes which can also be used. examples of such methods are ellipsometry and absorption spectroscopy. |