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Abstract In the present work, the temperature dependence of d.c. resistivity for potassium borosilicate glasses over a fair range of temperatures (300 to = 653K) is measured. The general glass composition is xK2o - (80 - x) B2O3 - 2O SiO2 where x = 30, 35, 40, 45 and 50 mole %. Two well defined activated processes are obtained in the lower and higher temperature regions. |