الفهرس 
INTRODUC’TION TO INFRARED D" ~ "T1OC!TIONOnly 14 pages are availabe for public view
 |  | from | 157 |  |  |
| | | from | 157 | | |
Abstract
The present study Ls carried out, in the field of
solid state Electronics, namely, the application of
·semiconductors as infrared detectors. lnf:l’areddetectors
as electronic devices, are of major importance in scient-
ific, military and industrial applica~ions. ·An extensive
survey of the present state of art was ca”t’rledout. The
interest of the present thesis vms confined to the intermediate
infrared det ec bor-s , InSb vlhich is a lll-V compound
was suggested for these detectors. lnSb has an optical
,energy gap of 0.18 ev at room temperature. This correspond$n
to a cut off wave length of 5.5 microns, which is in
the intermediate IR region of spectrum. The following
studies were specifically performed :-
1) The theory of energy gup band Structure of lnSb was
extensively studibd. Kane’s quantum mechanical theory
was used to interpret the band pa.ramoters of lnSb
which are of relevance to the pcrform.al1lceof an IR
detector.
2) Diffrent semicond~ctor devices used in IR photodetection
were studied and lJreHo:)ntecl .•
3) The effect of the degenc~acy of ~joriuy carriers on
the performance of the intrinsic photoconductors.was •
2.
thorou3hly studied and the performance in the presence
of magnetic field was also analysed.
4)
The photoelectromagnetio effect VIas derivecl and an
experimental teohnique for measuring lifetime and
surfaoe reoombination velocity of minority carriers
was suggested.
5) A study of the performance of intrinsic photoconductors
in the pres~noo of an impurity gradiant was
oarried out and a narrowband IR detector based on
this effect was suggested and theor~tically analysed.
6) A new narrow band IriSb IR detector based on the MossBurstein
effect was theorttioally analysed and its
operational charactaristics were discussed •