الفهرس | Only 14 pages are availabe for public view |
Abstract The present study Ls carried out, in the field of solid state Electronics, namely, the application of ·semiconductors as infrared detectors. lnf:l’areddetectors as electronic devices, are of major importance in scient- ific, military and industrial applica~ions. ·An extensive survey of the present state of art was ca”t’rledout. The interest of the present thesis vms confined to the intermediate infrared det ec bor-s , InSb vlhich is a lll-V compound was suggested for these detectors. lnSb has an optical ,energy gap of 0.18 ev at room temperature. This correspond$n to a cut off wave length of 5.5 microns, which is in the intermediate IR region of spectrum. The following studies were specifically performed :- 1) The theory of energy gup band Structure of lnSb was extensively studibd. Kane’s quantum mechanical theory was used to interpret the band pa.ramoters of lnSb which are of relevance to the pcrform.al1lceof an IR detector. 2) Diffrent semicond~ctor devices used in IR photodetection were studied and lJreHo:)ntecl .• 3) The effect of the degenc~acy of ~joriuy carriers on the performance of the intrinsic photoconductors.was • 2. thorou3hly studied and the performance in the presence of magnetic field was also analysed. 4) The photoelectromagnetio effect VIas derivecl and an experimental teohnique for measuring lifetime and surfaoe reoombination velocity of minority carriers was suggested. 5) A study of the performance of intrinsic photoconductors in the pres~noo of an impurity gradiant was oarried out and a narrowband IR detector based on this effect was suggested and theor~tically analysed. 6) A new narrow band IriSb IR detector based on the MossBurstein effect was theorttioally analysed and its operational charactaristics were discussed • |