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Abstract
Vertical eavity Surface Emitting Laser (VeSEL) are the most promising semiconductor light sources for fast parallel optical interconnect applications. Among other remarkable features, their circular output beam is often mentioned as crucial advantage for efficient and cheap fiber coupling. This thesis is devoted to simulate and characterize of III-V quaternary semiconductor vertical surface emitting laser (VeSEL).
The simulated device is Ga,Jnl_XAsyPI_y VeSEL in the active region and AlxGal_xlnyAsl_y/InP material system for the distributed Bragg reflectors (DBR) to achieve a high reflectivity. The simulation process is based on solution of two coupled non-linear differential equations, one for carrier distribution and the other for photon density of the generated laser beam .Several analytical expressions are derived for VeSEL parameters.
veSEL performance has been carried out for such VeSEL structure fabricated for operation at 1.55 !lm wavelength. The evaluated parameters are light-current characteristics, threshold current, carrier density, optical intensity, and total transient output power for the generated laser beam. A variety of such parameters showed consistent results theoretically and experimentally.