الفهرس 
Inductance and parasitic effectsOnly 14 pages are availabe for public view
 |  | from | 174 |  |  |
| | | from | 174 | | |
Abstract
For the design of integrated circuits in the radio frequency
band, equally important to active elements are also passive ones.
Besides capacitors and ohmic resistors, inductors were recently
successfully integrated on chip. The existence of high quality
inductors significantly determines the circuit performance.
Monolithic inductors are becoming of great importance for
many RF circuit. They are used in low noise amplifiers for
matching and as tuned band loads, in voltage controlled
oscillators as part of their tank circuit and in power amplifiers.
The integration of inductors on chip allows smaller chip size,
lower power consumption, and low cost for integrated circuits.
The modeling of these inductors is very important for
designers to allow them getting the best performance of their
circuits. The present inductor performance is based on libraries,
where the measured performance of prefabricated inductors is
stored and can be used directly by the designers. Electromagnetic
simulators are also used for inductor simulation, but are less
frequently used due to their complexity and large simulation time.
Some models have been introduced in the literature but most of
them are based on fitting factors.
In this work, emphasis is on the study of different physical
effects that dominate the performance of a planar inductor. These
include the inductor shape; tum proximity effects, metal losses
and electric and magnetic field losses in the substrate. The
ultimate goal of this work is to build novel and efficient compact
and scalable model for on-chip inductors on silicon that is based
only on physical parameters to get the inductor performance. The
model takes into account all loss mechanisms in metal, including
skin effects, proximity effects and fringing effects. The model
also includes the losses into the substrates due to electric and
magnetic field penetration. The proposed model is compared with
measurements and simulations for different processes and geometrical parameters. Comparison shows that the model
predicted exactly the maximum quality factor, the self resonance
frequency, and the inductance variation near resonance. The
model has no fitting parameters and the time of computation is
only few seconds.
Based on the understanding of different physical effects
that determine the inductor performance, and variation of this
performance with frequency, an optimization algorithm is
presented which allows the designer to get the needed inductance
with best quality factor without having to investigate different
interrelated physical parameters. The model and optimization
algorithm are implemented in Matlab code.