الفهرس 
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Abstract
In the present work, a new highly user-oriented device
simulator was developed for the study of transport properties of
planar MOSFETs by the solution of basic semiconductor equations
in two dimensions. This device simulator works under MATLAB
environment. Perfect physical models for Drift-Diffusion equations
including band-structure parameters, carrier mobility, and
Generation-Recombination rates were implemented into the
simulator.
The developed. simulator works at different levels of
sophistication (modes). The simplest mode solves in one
dimension, another one solves in two dimensions, third mode takes
into account generation mechanism, and the most sophisticated
mode takes into account carrier heating. New model for GateInduced
Drain Leakage (GIDL) phenomenon, observed in thinoxide
MOSFETs, was proposed and implemented into the
simulator. Through the interactive easy-to-use MATLAB graphical
user interface system, the user of the simulator can view the
distribution of many local parameters such as, doping
concentration, electric potential, electric field, carrier mobility, and
carrier concentrations. Output drain current characteristics against
both drain voltage and gate voltage are available, as well. Sample
outputs arc given ’accompanied with complete parametric study of
GIDL current.