الفهرس 
Solar Cell Structure
Semiconductor HeterojunctionOnly 14 pages are availabe for public view
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Abstract
The electrical properties of heterojunction solar cells
consisting of a very thin silicon oxide layer (I-layer)
sandwiched between indium-tin oxide (ITO) and p-type
silicon have been thoroughly studied. It has been found
that the potential DROP across the I-layer is much smaller
than the potential DROP on the space charge region in
the p-silicon. Therefore a field-induced n-p junction
will be formed in the P-silicon. The dark current of
this junction is dominated by carrier recombination
the
and by
current
space charge region at lower current
electron tunneling across the I-layer
densities. The current de~sity at
diode turns over from recombination-limited to tunneling
limited regime decreases drastically with the I-layer
thickness. The spectral response of these cells is better
than the conventional cells at shor.t er wavelengths.
While the open circuit voltage decreases weakly with
the I-Layer thickness, d, the short circuit current,
will be reduced from· the photocurrent to nearly zero
if d is varied from 16 AD to 18 AD. The conversion effi-
ciency behaves similarly as the shortcircuit current.
Good agreement has been found between the theoretical
and the experimental results.
densities
at higher
which the