الفهرس 
Model DescriptionOnly 14 pages are availabe for public view
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Abstract
The main objective of this dissertation is to develop a circuit-level de
current model for the MOS transistor. Special care is taken to the modeling
of the transistors of non uniform doping. The model is to be used for analog
and digital circuit design. This puts heavy demands on the accuracy provided
by the model. The model is based on the representation of current transport in
a sheet channel in terms of the surface potential conditions at the source and
drain boundaries. The model is scaleable and results in continuous device
characteristics under all operating conditions, from deep subthreshold to
strong inversion. Accuracy of the model is demonstrated over a wide range
of device geometries and terminal voltages. The features of scalability,
continuity, and accuracy are attributed to the physical representation of all
important effects occurring in the MOS transistor. The model is implemented
under the circuit simulator ELDO using HDL-A language and can be used to
simulate dc MOSFET circuits.
Also we develop an automated measurements program works under
LabVIEW software to characterize the MOS transistors, as well as an
automated program to extract the model parameters from the measured
characteris tics.