الفهرس 
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Abstract
A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform discussed in chapter 2 supports mm-wave components up to the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with high potential of integration of active devices. There is no need for post-fabrication assembly steps for complex systems, which will provide high accuracy of placement of different components on the same platform. The platform is theoretically and experimentally investigated. The fabrication process is a simple one-mask fabrication process composed of deep reactive ion etching of the device layer of the SOI wafer. Design of dielectric image guide in the D-Band is performed. The simulation results show attenuation better than 0.25 dB/cm. Fabrication and experimental measurements are performed at 60 and 100 GHz. Due to fabrication and practical challenges occurred from the very thin substrate thickness, a new modified design of low-cost and low-loss dielectric image guide (DIG) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform proposed in chapter 3 uses thick handle wafer of the SOI in order to increase the stiffness of the DIG platform and prevent any damage through fabrication and dicing process. The proposed new structure added two sets of supporting beams, one at each side of the dielectric image guide. The supporting beams are the only connection of the guide to the SOI wafer. The design of the beams was performed in order to maintain the same performance of and field confinement of thin handle wafer. The 2-D modal simulation results of the new structure show excellent confinement of the fields inside the DIG structure. The 3-D simulation using HFSS shows excellent match of the insertion and return loss compared with the DIG with thin handle wafer over the E-band. In chapter 3 linear and nonlinear properties of graphene at millimeter wave frequency band is investigated. The nonlinear properties of the graphene are utilized to design some major active devices widely used in communication receivers like frequency multiplier and mixer for millimeter wave range. A patch of graphene is deposited on the dielectric image guide that will generate higher order harmonics. The amplitude of harmonics or optimized III based on the dimensions of the graphene patch on top of the dielectric image guide. A frequency multiplier and mixer are designed that utilizes the second harmonics generated through graphene. The nonlinear behavior of the proposed designs has been simulated in the 50–75GHz input signal frequency range. A conversion efficiency of -23 dB is obtained for the second harmonic for the frequency doublers. The frequency mixer is designed in V-Band using dielectric image guide as the waveguide. A -28 dB conversion efficiency is simulated on dielectric image-guide platform which shows a very good result if compared to currently existing technologies.