الفهرس 
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Abstract
Thin films of 5,10,15,20-Tetraphenyl-21H,23H-porphine manganese (III) chloride, MnTPPCl, were successfully deposited by thermal evaporation technique. The structure of thin films was characterized using Thermal Gravimetric Analysis, TGA, Fourier Transform Infrared, FTIR, X-ray Diffraction, XRD, and Atomic Force Microscope, AFM, techniques. The optimization of the molecular structure, vibrational spectra, and HOMO-LUMO energy gap of MnTPPCl as the isolated molecule were accomplished depends on the density functional theory (DFT) utilizing Gaussian 09 Package program at B3LYP level with basis set 6-31G(d) for C,N, H, and Cl atoms and the LanL2DZ basis set for Mn atom. FTIR analysis revealed that thermal deposition technique is a convenient one to obtain chemically stable MnTPPCl thin films. XRD patterns showed nanocrystallites dispersed in the amorphous matrix for the pristine and annealed thin films. Annealing temperature increased the crystallite size and improved crystallinity of films. The irradiated films with 150 kGy have an amorphous structure. The observed results obtained by XRD technique are in agreement with those observed by AFM technique. Optical constants (n and k indices) of MnTPPCl films were calculated from absolute values of transmittance and reflectance measured by spectrophotometric technique in the wavelength range 200–2500 nm. The type of electron transition is direct allowed one. The optical energy gap (Eg) was estimated by DFT and optical measurements as 2.231 and 2.48 eV, respectively. Annealing temperatures have no influence on optical energy gap but it increased the onset energy gap. In addition, optical constants and oscillator’s parameters were influenced by the γ-irradiation process. The AC conductivity and dielectric properties of MnTPPCl sandwich structure as Au/MnTPPCl/Au were studied. The conductivity of the MnTPPCl thin films was interpreted by the correlated barrier hopping (CBH) model. A hydride solar cell was fabricated by depositing a thin film of 5, 10, 15, 20-tetraphenyl-21H, 23H-porphine manganese (III) chloride, MnTPPCl, on n-Silicon single crystal wafer. The current–voltage characteristics were recorded at different temperatures. The photovoltaic behavior of Au/MnTPPCl/n-Si/Al device with a fill factor of 0.336 and power conversion efficiency of 4.62% was deduced from current–voltage characteristics under illumination of 20 mW/cm2.